RADIATION-DAMAGE OF SILICON MICROSTRIP DETECTORS BY 1.5 MEV ELECTRONS AND SYNCHROTRON RADIATION

被引：3
|
作者：
CHILINGAROV, A [1 ]
DOLBNYA, I [1 ]
KURYLO, S [1 ]
TRUTZSCHLER, K [1 ]
机构：
[1] INST HOCHENERGIEPHYS,BERLIN,GERMANY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1991年 / 310卷 / 1-2期
关键词：
D O I：
10.1016/0168-9002(91)91043-U
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have investigated the radiation hardness of silicon microstrip detectors by exposing them to 1.5 MeV electrons and synchrotron radiation. Observed earlier nonlinear dependence of radiation damage current with dose is confirmed. Room temperature self-annealing is found to have different rate for defects produced by electrons and photons respectively. The surface and bulk contributions to damage current are discussed.
引用
收藏
页码：277 / 282
页数：6
相关论文
共 50 条
  • [31] SYNCHROTRON RADIATION DETECTORS FOR TAGGING ELECTRONS
    CRITTENDEN, R
    KRIDER, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 276 (03): : 643 - 646
  • [32] High statistics study of radiation damage on silicon microstrip detectors
    Dutta, S
    Borrello, L
    Dell'Orso, R
    Giassi, A
    Messineo, A
    Segneri, G
    Starodumov, A
    Teodorescu, L
    Tonelli, G
    Verdini, PG
    Xie, Z
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 2303 - 2306
  • [33] THE PHYSICS OF RADIATION-DAMAGE IN PARTICLE DETECTORS
    VANLINT, VAJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 253 (03): : 453 - 459
  • [34] SURVEY OF RADIATION-DAMAGE IN SEMICONDUCTOR DETECTORS
    GOULDING, FS
    PEHL, RH
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (01) : 91 - &
  • [35] RADIATION-DAMAGE IN SEMICONDUCTOR-DETECTORS
    KRANER, HW
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (03) : 1088 - 1100
  • [36] RADIATION-DAMAGE STUDIES OF FIELD PLATE AND P-STOP N-SIDE SILICON MICROSTRIP DETECTORS
    MATHESON, J
    MOSER, HG
    ROE, S
    WEILHAMMER, P
    MOSZCZYNSKI, S
    DABROWSKI, W
    GRYBOS, P
    IDZIK, M
    SKOCZEN, A
    GILL, K
    HALL, G
    MACEVOY, B
    VITE, D
    WHEADON, R
    ALLPORT, P
    GREEN, C
    RICHARDSON, J
    APSIMON, R
    EVENSEN, L
    AVSET, B
    GIUBELLINO, P
    RAMELLO, L
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1995, 362 (2-3): : 297 - 314
  • [37] EFFECT OF CRYSTALLOGRAPHIC CONDITIONS ON RADIATION-DAMAGE BY 0.5 - 3MEV ELECTRONS
    FUJITA, H
    SUMIDA, N
    ACTA CRYSTALLOGRAPHICA SECTION A, 1972, 28 : S155 - S155
  • [38] TEMPERATURE-DEPENDENCE OF RADIATION-DAMAGE AND ITS ANNEALING IN SILICON DETECTORS
    ZIOCK, HJ
    BOISSEVAIN, JG
    HOLZSCHEITER, K
    KAPUSTINSKY, JS
    PALOUNEK, APT
    SONDHEIM, WE
    BARBERIS, E
    CARTIGLIA, N
    LESLIE, J
    PITZL, D
    ROWE, WA
    SADROZINSKI, HFW
    SEIDEN, A
    SPENCER, E
    WILDER, M
    ELLISON, JA
    FLEMING, JK
    JERGER, S
    JOYCE, D
    LIETZKE, C
    REED, E
    WIMPENNY, SJ
    FERGUSON, P
    FRAUTSCHI, MA
    MATTHEWS, JAJ
    SKINNER, D
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (04) : 344 - 348
  • [39] DAMAGE EFFECTS IN SILICON SURFACE BARRIER DETECTORS BY 0.5-1.5 MEV ELECTRONS
    NAKAMOTO, S
    AOKI, T
    KAWABATA, K
    NORISAWA, K
    SAKISAKA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) : 1493 - 1499
  • [40] Radiation damage in Si microstrip detectors
    Cindro, V
    Mikuz, M
    INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, 1997, 27 (03): : 177 - 181
12345