LOW-TEMPERATURE PSEUDOMORPHIC GROWTH OF GE ON SI(100)-(2X1)

被引：7

作者：

LYMAN, PF ^{[1
]}

THEVUTHASAN, S ^{[1
]}

SEIBERLING, LE ^{[1
]}

机构：

[1] UNIV PENN,DEPT PHYS,PHILADELPHIA,PA 19104

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 113卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(91)90007-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the structure of 1 to 10 monolayer (ML) Ge films grown at room temperature on Si(100)-(2 x 1). Using transmission ion channeling spectroscopy, we have uncovered the first evidence for pseudomorphic structure in these films, contradicting the widely-held belief of amorphous growth at temperatures below 500 K. A model is proposed for growth of pseudomorphic domains, which constitute roughly half of the Ge films up to a critical thickness (approximately 4 ML) after which strain is relieved through defect introduction.

引用

页码：45 / 52

页数：8

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