HIGH-POWER 2.0-MU-M INGAASP LASER-DIODES

被引：35
|
作者：
MAJOR, JS
NAM, DW
OSINSKI, JS
WELCH, DF
机构：
[1] Spectra Diode Laboratories, San Jose
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 06期
关键词：
D O I：
10.1109/68.219679
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Data are presented on strained-layer InGaAs/InGaAsP double-quantum-well laser diodes operating at 2.0 mum. The total external efficiency and maximum power achieved is 55% and 1.6 W CW, respectively, from a 200 mum gain-guided laser diode. Measurements on gain-guided broad area devices yield an internal efficiency of 0.73 with a distributed loss coefficient, alpha, of 7.5 cm-1. The measured threshold current density is 300 A/cm 2 for a 2 mm long broad area device operated continuous-wave at 25-degrees-C.
引用
收藏
页码：594 / 596
页数：3
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