HIGH-POWER LASER-DIODES

被引：2
|
作者：
VOLLUET, G
GROUSSIN, B
FILLARDET, T
CARRIERE, C
PARENT, A
机构：
来源：
JOURNAL DE PHYSIQUE III | 1992年 / 2卷 / 09期
关键词：
D O I：
10.1051/jp3:1992207
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we discuss specific technological requirements to obtain high power laser diodes. Our report is restricted to the components developed at Thomson Hybrides, with special emphasis on a new technology of monolithic surface emitting arrays.
引用
收藏
页码：1713 / 1726
页数：14
相关论文
共 50 条
  • [1] HIGH-POWER ULTRAFAST LASER-DIODES
    DELFYETT, PJ
    FLOREZ, LT
    STOFFEL, N
    GMITTER, T
    ANDREADAKIS, NC
    SILBERBERG, Y
    HERITAGE, JP
    ALPHONSE, GA
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) : 2203 - 2219
  • [2] HIGH-POWER LASER-DIODES BASED ON INGAASP ALLOYS
    RAZEGHI, M
    NATURE, 1994, 369 (6482) : 631 - 633
  • [3] ANALYSIS OF RAPID DEGRADATION IN HIGH-POWER (ALGA)AS LASER-DIODES
    FRITZ, WJ
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (01) : 68 - 74
  • [4] HIGH-POWER SINGLE-MODE ALGAAS LASER-DIODES
    BOTEZ, D
    CHANNIN, DJ
    ETTENBERG, M
    OPTICAL ENGINEERING, 1982, 21 (06) : 1066 - 1073
  • [5] HIGH-POWER LASER-DIODES DRAW ATTENTION AT INTEROPTO 92
    FORREST, GT
    LASER FOCUS WORLD, 1992, 28 (09): : 18 - +
  • [6] HIGH-POWER SINGLE-MODE ALGAAS LASER-DIODES
    BOTEZ, D
    CHANNIN, DJ
    ETTENBERG, M
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 321 : 76 - 85
  • [7] HIGH-POWER OPERATION OF 830-NM ALGAAS LASER-DIODES
    SHINOZAKI, K
    WATANABE, A
    FURUKAWA, R
    WATANABE, N
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (08) : 2907 - 2911
  • [8] HIGH-RELIABILITY, HIGH-POWER, SINGLE-MODE LASER-DIODES
    WELCH, D
    CRAIG, R
    STREIFER, W
    SCIFRES, D
    ELECTRONICS LETTERS, 1990, 26 (18) : 1481 - 1483
  • [9] HIGH-POWER CONTINUOUS OPERATION OF LASER-DIODES AT 1064NM
    MURISON, RF
    MOORE, AH
    LEE, SR
    HOLEHOUSE, N
    DZURKO, KM
    COCKERILL, TM
    COLEMAN, JJ
    ELECTRONICS LETTERS, 1991, 27 (21) : 1979 - 1981
  • [10] LONG-LIVED HIGH-POWER GAALAS DH LASER-DIODES
    IMAI, H
    MORIMOTO, M
    HORI, K
    TAKUSAGAWA, M
    SAITO, H
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (03) : 248 - 250
12345