HYSTERESIS IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS-I-TRANSISTORS-V CHARACTERISTICS

被引：0

作者：

LAU, WM ^{[1
]}

JI, LJ ^{[1
]}

LOWE, K ^{[1
]}

TANG, W ^{[1
]}

YOUNG, L ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1985年 / 63卷 / 06期

关键词：

CURRENT-VOLTAGE CHARACTERISTICS - MESFETS;

D O I：

10.1139/p85-119

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：748 / 752

页数：5

共 50 条

[41] FABRICATION OF Y-GATE, SUBMICRON GATE LENGTH GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
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[44] THE GATE-BIAS DEPENDENCY OF BREAKDOWN LOCATION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MESFETS)
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[48] Impact ionization and light emission in GaAs metal-semiconductor field effect transistors
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[50] Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers
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