STRUCTURE OF SI1-XGEX ALLOYS

被引:0
|
作者
KIM, EJ
LEE, YH
机构
[1] JEONBUK NATL UNIV,SEMICOND PHYS RES CTR,CHONJU 560756,SOUTH KOREA
[2] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We generate liquid Si1-xGex alloys by simulated quench from the melt using ab initio molecular dynamics. In the case of crystalline SiGe alloy, we confirm that the rhombohedral structure is stabler than the zincblende structure with the same lattice constant. This result is in good agreement with other theoretical calculations. We observe the phase separation at liquid temperature (1500 K) when Ge composition is greater than 15%. The clustering effects are also strongly composition-dependent. These phenomena are clearly seen in the radial distribution function and the bond angle distribution. We explain the peculiarity with use of the P-Sn structure and the cluster model. The coordination number also shows the phase separation initiated at x>0.15.
引用
收藏
页码:S172 / S178
页数:7
相关论文
共 50 条
  • [31] STRUCTURE AND VISIBLE PHOTOLUMINESCENCE OF POROUS SI1-XGEX
    SCHOISSWOHL, M
    CANTIN, JL
    CHAMARRO, M
    VONBARDELEBEN, HJ
    MORGENSTERN, T
    BUGIEL, E
    KISSINGER, W
    ANDREU, RC
    PHYSICAL REVIEW B, 1995, 52 (16) : 11898 - 11903
  • [32] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    Christensen, JS
    Radamson, HH
    Kuznetsov, AY
    Svensson, BG
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) : 6533 - 6540
  • [33] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    Christensen, J.S. (jens@imit.kth.se), 1600, American Institute of Physics Inc. (94):
  • [34] Composition dependence of Si and Ge diffusion in relaxed Si1-xGex alloys
    Kube, R.
    Bracht, H.
    Hansen, J. Lundsgaard
    Larsen, A. Nylandsted
    Haller, E. E.
    Paul, S.
    Lerch, W.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
  • [35] {311} defect evolution in Si-implanted Si1-xGex alloys
    Crosby, RT
    Jones, KS
    Law, ME
    Larsen, AN
    Hansen, JL
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (04) : 205 - 208
  • [36] Velocity overshoot in a modulation doped Si/Si1-xGex structure
    Yamada, Toshishige
    Miyata, H.
    Zhou, Jing-Rong
    Ferry, D.K.
    Semiconductor Science and Technology, 1994, 9 (5 SUPPL) : 775 - 777
  • [37] Valence band structure of strained Si/(111)Si1-xGex
    Song JianJun
    Zhang HeMing
    Hu HuiYong
    Dai XianYing
    Xuan RongXi
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 53 (03) : 454 - 457
  • [38] PROBING THE INTERFACIAL AND SUBSURFACE STRUCTURE OF SI/SI1-XGEX MULTILAYERS
    SUGDEN, S
    SOFIELD, CJ
    NOAKES, TCQ
    KUBIAK, RAA
    MCCONVILLE, CF
    APPLIED PHYSICS LETTERS, 1995, 66 (21) : 2849 - 2851
  • [40] THE STRUCTURE OF SI1-XGEX/SI HETEROSTRUCTURE WAVE-GUIDES
    YANG, Z
    SHAO, G
    WEISS, BL
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, (134): : 399 - 402