ON NATURE OF INTERFACE STATES IN AN SIO2-SI SYSTEM AND ON INFLUENCE OF HEAT TREATMENTS ON OXIDE CHARGE

被引：0

|

作者：

WHELAN, MV

机构：

来源：

PHILIPS RESEARCH REPORTS | 1967年 / 22卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：289 / +

页数：1

相关论文

共 50 条

[1] INTERFACE STATES AT THE SIO2-SI INTERFACE
SCHULZ, M
SURFACE SCIENCE, 1983, 132 (1-3) : 422 - 455
[2] CHARGE FLUCTUATIONS IN SIO2-SI INTERFACE
NAKHMANSON, RS
SEVASTIANOV, SB
INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (03) : 379 - 389
[3] CHARGES IN OXIDE AT SIO2-SI INTERFACE
REINECKE, TL
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 455 - 455
[4] INFLUENCE OF SIO2-SI INTERFACE STATES ON SAW TRANSDUCTION IN A SIO2-SI LAYERED MEDIUM COVERED WITH A PIEZOELECTRIC OVERLAY
VENEMA, A
IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1982, 29 (03): : 163 - 163
[5] Imaging of oxide and interface charges in SiO2-Si
Ludeke, R
Cartier, E
MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 259 - 263
[6] Imaging of trapped charge in SiO2 and at the SiO2-Si interface
Ludeke, R
Cartier, E
APPLIED PHYSICS LETTERS, 2001, 78 (25) : 3998 - 4000
[7] SERIES EQUIVALENT CIRCUIT REPRESENTATION OF SIO2-SI INTERFACE AND OXIDE TRAP STATES
EATON, DH
SAH, CT
SOLID-STATE ELECTRONICS, 1973, 16 (08) : 841 - 846
[8] 2ND-HARMONIC GENERATION BY AN SIO2-SI INTERFACE - INFLUENCE OF THE OXIDE LAYER
KULYUK, LL
SHUTOV, DA
STRUMBAN, EE
AKTSIPETROV, OA
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1991, 8 (08) : 1766 - 1769
[9] INFLUENCE OF HEAT TREATMENTS AND IONIZING IRRADIATIONS ON CHARGE DISTRIBUTION AND NUMBER OF SURFACE STATES IN SI-SIO2 SYSTEM
KOOI, E
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 238 - +
[10] Foreword - The SiO2-Si Interface
Baumvol, I. J. R.
BRAZILIAN JOURNAL OF PHYSICS, 1997, 27 (02) : 291 - 291

← 1 2 3 4 5 →