GAINP/GAAS SCHOTTKY DIODES GROWN BY ATOMIC LAYER EPITAXY AND THEIR APPLICATION TO MESFETS

被引：3
|
作者：
JUNG, D
HYUGA, F
BEDAIR, SM
机构：
[1] N CAROLINA STATE UNIV, DEPT PHYS, RALEIGH, NC 27695 USA
[2] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
[3] N CAROLINA STATE UNIV, DEPT ELECT & COMP ENGN, RALEIGH, NC 27695 USA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 11期
关键词：
D O I：
10.1088/0268-1242/9/11/012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Atomic layer epitaxy (ALE) was used to grow GaInP/GaAs MESFET structures, where control of the thickness of the GaInP layer is critical. GaInP/GaAs Schottky diodes showed higher breakdown voltages than GaAs Schottky diodes. MESFETs with GaInP/GaAs Schottky gates showed a good saturation and pinch-off behaviour of the drain-source current.
引用
收藏
页码：2107 / 2109
页数：3
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