AN INTERFACE ENHANCED SPECTROSCOPIC ELLIPSOMETRY TECHNIQUE - APPLICATION TO SI-SIO2

In this research we demonstrate an ellipsometry technique that is sensitive to the interfacial region between a dielectric film and substrate. Essentially, a film with substrate is immersed in a liquid that index matches to the film, thereby optically removing the film from the measurement. In addition, the use of spectroscopic and multiple angles of incidence ellipsometry provide sufficient specification of the interface parameters, which, along with the enhanced sensitivity to the interface, enables the optical measurement of the interfacial properties. Theoretical and experimental verification is provided, along with application to the Si-SiO2 interface.