AN INTERFACE ENHANCED SPECTROSCOPIC ELLIPSOMETRY TECHNIQUE - APPLICATION TO SI-SIO2

被引：35

作者：

YAKOVLEV, VA ^{[1
]}

IRENE, EA ^{[1
]}

机构：

[1] ACAD SCI USSR,INST CRYSTALLOG,MOSCOW 117333,USSR

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 05期

关键词：

D O I：

10.1149/1.2069429

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this research we demonstrate an ellipsometry technique that is sensitive to the interfacial region between a dielectric film and substrate. Essentially, a film with substrate is immersed in a liquid that index matches to the film, thereby optically removing the film from the measurement. In addition, the use of spectroscopic and multiple angles of incidence ellipsometry provide sufficient specification of the interface parameters, which, along with the enhanced sensitivity to the interface, enables the optical measurement of the interfacial properties. Theoretical and experimental verification is provided, along with application to the Si-SiO2 interface.

引用

页码：1450 / 1455

页数：6

共 50 条

[1] Application of spectroscopic ellipsometry for investigations of compaction and decompaction state in Si-SiO2 systems
Rzodkiewicz, W.
Panas, A.
7TH INTERNATIONAL CONFERENCE ON MODERN PRACTICE IN STRESS AND VIBRATION ANALYSIS, 2009, 181
[2] A SIMPLE TECHNIQUE FOR DETERMINING THE STRESS AT THE SI-SIO2 INTERFACE
BORDEN, PG
APPLIED PHYSICS LETTERS, 1980, 36 (10) : 829 - 831
[3] Si-SiO2 electronic interface roughness as a consequence of Si-SiO2 topographic interface roughness
LSI/PEE/EPUSP, Sao Paulo, Brazil
J Electrochem Soc, 3 (1021-1025):
[4] Si-SiO2 electronic interface roughness as a consequence of Si-SiO2 topographic interface roughness
Lopes, MCV
dosSantos, SG
Hasenack, CM
Baranauskas, V
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (03) : 1021 - 1025
[5] METASTABILITIES OF SI-SIO2 INTERFACE
WHITE, CT
NGAI, KL
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 462 - 463
[6] MORPHOLOGY OF SI-SIO2 INTERFACE
SUGANO, T
CHEN, JJ
HAMANO, T
SURFACE SCIENCE, 1980, 98 (1-3) : 154 - 166
[7] THE DOPED SI-SIO2 INTERFACE
SNEL, J
SOLID-STATE ELECTRONICS, 1981, 24 (02) : 135 - 139
[8] THE ROUGHNESS OF THE SI-SIO2 INTERFACE
HUANG, BZ
YU, YZ
HONG, GG
CHINESE PHYSICS, 1988, 8 (02): : 300 - 307
[9] Structure of the Si-SiO2 interface
Plucinski, KJ
EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 191 - 195
[10] INDIVIDUAL INTERFACE TRAPS AT THE SI-SIO2 INTERFACE
MUELLER, HH
SCHULZ, M
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1994, 5 (06) : 329 - 338

← 1 2 3 4 5 →