QUANTUM MAGNETOTUNNELING TIME OF ELECTRONS IN GA1-XALXAS-GAAS SUPERLATTICES

被引：0
|
作者：
CRUZ, H
HERNANDEZCABRERA, A
MUNOZ, A
机构：
[1] Dpto. Física Fundamental y Experimental, Universidad de La Laguna, 38204 La Laguna, Tenerife
来源：
SOLID STATE COMMUNICATIONS | 1991年 / 79卷 / 09期
关键词：
D O I：
10.1016/0038-1098(91)90789-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this work, we have calculated magnetotunneling times of electrons in Ga(1-x)Al(x)As-GaAs multiquantum well heterostructures under an external electric field through analytical solutions. Effective-mass equation of electrons in crossed electric and magnetic fields has been analytically solved by means of Confluent Hypergeometric Functions finding the existence of individualized tunneling channels connected with anticrossings in the dispersion relation. It is found that the quantum tunneling time between two coupled quantum wells decreases if B is increased.
引用
收藏
页码：749 / 754
页数：6
相关论文
共 50 条
  • [31] OPTIMIZATION OF THE TEMPERATURE-RANGE FOR ACCELERATED TESTING OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS
    CHERNOUSOV, NP
    KRIREL, VG
    BOROSHNEV, AV
    POLTORATSKII, VM
    [J]. KVANTOVAYA ELEKTRONIKA, 1981, 8 (06): : 1334 - 1336
  • [32] HIGH-GAIN WIDE-GAP-EMITTER GA1-XALXAS-GAAS PHOTOTRANSISTOR
    BENEKING, H
    MISCHEL, P
    SCHUL, G
    [J]. ELECTRONICS LETTERS, 1976, 12 (16) : 395 - 396
  • [33] FORMATION OF GA1-XALXAS-GAAS SOLAR-CELLS FROM UNDERSATURATED GA-AL-AS MELTS
    WOODALL, JM
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 265 - 265
  • [34] Ga1-xAlxAs-GaAs太阳电池低阻接触研究
    隋兆文
    陈芬扣
    吴鼎芬
    白霞
    [J]. 太阳能学报, 1984, (04) : 380 - 384
  • [35] Ga1-xAlxAs-GaAs DH 激光器的质子轰击研究
    张莲英
    张银女
    [J]. 中国激光, 1982, (02) : 109 - 111
  • [36] NON-DESTRUCTIVE CHARACTERIZATION OF GA1-XALXAS-GAAS INTERFACES USING NUCLEAR PROFILING
    ROSNER, JS
    LESSER, PMS
    POLLAK, FH
    WOODALL, JM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 584 - 588
  • [37] PECULIARITIES OF THE LOCALIZATION OF ELECTRONS IN GAAS-GA1-XALXAS HETEROSTRUCTURES
    KULBACHINSKII, VA
    RODICHEV, DY
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 150 (01): : K25 - K29
  • [38] Reply to "Comment on 'Spin and cyclotron energies of electrons in GaAs/Ga1-xAlxAs quantum wells'"
    Pfeffer, P.
    Zawadzki, W.
    [J]. PHYSICAL REVIEW B, 2007, 76 (19)
  • [39] ATOMIC-STRUCTURE OF INTERFACES IN GAAS/GA1-XALXAS SUPERLATTICES
    LAVAL, JY
    DELAMARRE, C
    DUBON, A
    SCHIFFMACHER, G
    DESAGEY, GT
    GUENAIS, B
    REGRENY, A
    [J]. JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 97 - 100
  • [40] LARGE INTERSUBBAND INFRARED TRANSITIONS IN GAAS-GA1-XALXAS SUPERLATTICES
    BROWN, LDL
    JAROS, M
    HERBERT, DC
    [J]. PHYSICAL REVIEW B, 1989, 40 (03): : 1616 - 1619
12345