共 50 条
- [42] REDETERMINATION OF EFFECTIVE MASS IN HEAVILY DOPED N-TYPE INAS PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 59 (01): : K35 - K37
- [43] HEAVILY DOPED CRYSTALS OF N-TYPE INDIUM-ANTIMONIDE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (01): : 11 - 26
- [44] ORBACH RELAXATION PROCESS IN HEAVILY DOPED N-TYPE SILICON PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (02): : K109 - K112
- [45] TEMPERATURE DEPENDENCE OF RESISTIVITY OF HEAVILY DOPED N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1915 - &
- [46] Hopping conduction in heavily doped bulk n-type SiC Journal of Electronic Materials, 1997, 26 : 113 - 118
- [47] NEGATIVE MAGNETORESISTANCE IN HEAVILY DOPED AND COMPENSATED N-TYPE INSB PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 119 (02): : 721 - 726
- [48] THERMOREFLECTANCE AT FUNDAMENTAL GAP OF HEAVILY DOPED N-TYPE INAS PHYSICAL REVIEW B, 1973, 8 (12): : 5738 - 5746