NEAR BAND-EDGE PHOTOLUMINESCENCE FROM SI1-XGEX/SI SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：48
|
作者：
STEINER, TD
HENGEHOLD, RL
YEO, YK
GODBEY, DJ
THOMPSON, PE
POMRENKE, GS
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] USAF,OFF SCI RES,WASHINGTON,DC 20332
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期
关键词：
D O I：
10.1116/1.586155
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sharp, well-resolved near band-edge photoluminescence (PL) has been observed from long-period Si1-xGex/Si superlattices grown by molecular-beam epitaxy, including PL from a 120 angstrom Si/40 angstrom Si1-xGex sample. The sharp PL is due to shallow bound excitons (BE), and consists of a no-phonon (NP) line as well as phonon-assisted lines. The exciton binding energies obtained from the temperature dependence of the BE(NP) lines are in the range of 4-6 meV.
引用
收藏
页码：924 / 926
页数：3
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