SINGLE-MONOLAYER QUANTUM-WELLS OF GAINAS IN INP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：32
|
作者：
SEIFERT, W
FORNELL, JO
LEDEBO, L
PISTOL, ME
SAMUELSON, L
机构：
[1] EPIQUIP AB,S-22370 LUND,SWEDEN
[2] UNIV LUND,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期
关键词：
D O I：
10.1063/1.102589
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaInAs/InP quantum wells differing in thickness between 1 and 20 monolayers (1 monolayer≊2.93 Å) have been grown by low-pressure (50 mbar) metalorganic vapor phase epitaxy and investigated by 2 K photoluminescence. To our knowledge this is the first observation of the one monolayer quantum well. Well-resolved photoluminescence peaks were observed and were attributed to recombination of excitons bound to quantum wells of defined monolayer thickness. The growth rate could be adjusted to produce a one monolayer quantum well. Its photoluminescence peak was observed at 1.245 eV, corresponding to a quantum confinement shift of 434 meV. The full width at half maximum of this peak was only 8 meV.
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收藏
页码：1128 / 1130
页数：3
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