MOLECULAR-BEAM EPITAXIAL-GROWTH OF A NOVEL STRAINED-LAYER SUPERLATTICE SYSTEM - CDTE-ZNTE

被引：58
|
作者：
MONFROY, G
SIVANANTHAN, S
CHU, X
FAURIE, JP
KNOX, RD
STAUDENMANN, JL
机构：
[1] IOWA STATE UNIV SCI & TECHNOL,DEPT PHYS,AMES,IA 50011
[2] AMES LAB,AMES,IA 50011
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 03期
关键词：
D O I：
10.1063/1.97208
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：152 / 154
页数：3
相关论文
共 50 条
  • [41] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SILICON DEVICES
    ALLEN, FG
    IYER, SS
    METZGER, RA
    [J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 2 - 12
  • [42] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAP ON SI
    WRIGHT, SL
    KROEMER, H
    INADA, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2916 - 2927
  • [43] DIRECT MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE(100) AND CDZNTE(100)/ZNTE(100) ON SI(100) SUBSTRATES
    DELYON, TJ
    ROTH, JA
    WU, OK
    JOHNSON, SM
    COCKRUM, CA
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (06) : 818 - 820
  • [44] PRESENT STATUS OF MOLECULAR-BEAM EPITAXIAL-GROWTH AND PROPERTIES OF HGTE-CDTE SUPERLATTICES
    FAURIE, JP
    SIVANANTHAN, S
    RENO, J
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2096 - 2100
  • [45] MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE, HGTE, AND HG1-XCDXTE ALLOYS
    SUMMERS, CJ
    MEEKS, EL
    COX, NW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 224 - 228
  • [46] INSITU GROWTH SURFACE-TEMPERATURE MEASUREMENT FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE, ZNTE, AND CD1-XZNX TE ALLOYS
    RAJAVEL, D
    MUELLER, F
    BENSON, JD
    WAGNER, BK
    BENZ, RG
    SUMMERS, CJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1002 - 1005
  • [47] GROWTH OF ZNSE-ZNS STRAINED-LAYER SUPERLATTICES BY METALLORGANIC MOLECULAR-BEAM EPITAXY
    TAIKE, A
    TERAGUCHI, N
    KONAGAI, M
    TAKAHASHI, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L989 - L991
  • [48] DETERMINATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH PARAMETERS BY ELLIPSOMETRY
    DROOPAD, R
    KUO, CH
    ANAND, S
    CHOI, KY
    MARACAS, GN
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1211 - 1213
  • [49] MOLECULAR-BEAM EPITAXIAL-GROWTH OF NIAL ON GAAS(001)
    CHAMBERS, SA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 737 - 741
  • [50] EPITAXIAL-GROWTH OF ZNS ON GAP BY MOLECULAR-BEAM DEPOSITION
    KANIE, H
    ARAKI, H
    ISHIZAKA, K
    OHTA, H
    MURAKAMI, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 145 - 149
12345