VERTICAL ELECTRICAL CONDUCTANCE IN ARTIFICIAL SI/NB MULTILAYERS

被引：4
|
作者：
SONG, SN
KETTERSON, JB
机构：
[1] Department of Physics and Astronomy, Northwestern University, Evanston
来源：
SOLID STATE COMMUNICATIONS | 1990年 / 75卷 / 08期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0038-1098(90)90218-Z
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Both the vertical and in-plane resistivities of Si/Nb multilayer films with different modulation wavelengths have been measured between 2 and 300 K, yielding an anisotropy ratio which can be over 105. While the in-plane transport in the normal state is metallic-like, the vertical conductance changes from phonon-assisted hopping to weak localization as the thickness of the Si layer is reduced, and is dominated by quantum mechanical tunneling at low temperatures. © 1990.
引用
收藏
页码：651 / 655
页数：5
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