PLANAR MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A GAAS PRE-AMPLIFIER

被引:47
|
作者
KOLBAS, RM [1 ]
ABROKWAH, J [1 ]
CARNEY, JK [1 ]
BRADSHAW, DH [1 ]
ELMER, BR [1 ]
BIARD, JR [1 ]
机构
[1] HONEYWELL OPTOELECTR DIV,RICHARDSON,TX 75081
关键词
D O I
10.1063/1.94507
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:821 / 823
页数:3
相关论文
共 50 条
  • [21] MONOLITHIC INTEGRATION OF A LASER DIODE, PHOTO MONITOR, AND ELECTRIC-CIRCUITS ON A SEMI-INSULATING GAAS SUBSTRATE
    MATSUEDA, H
    NAKAMURA, M
    APPLIED OPTICS, 1984, 23 (06): : 779 - 780
  • [22] ULTRA HIGH-SPEED PLANAR SCHOTTKY-BARRIER GAAS PHOTO-DIODE WITH FWHM LESS-THAN-9PSEC
    WANG, SY
    BLOOM, DM
    COLLINS, DM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1611 - 1612
  • [23] PLANAR MONOLITHIC INTEGRATION OF A GAAS PHOTOCONDUCTOR AND A GAAS FIELD-EFFECT TRANSISTOR
    DECOSTER, D
    VILCOT, JP
    CONSTANT, M
    RAMDANI, J
    VERRIELE, H
    VANBREMEERSCH, J
    ELECTRONICS LETTERS, 1986, 22 (04) : 193 - 195
  • [24] TEMPERATURE-DEPENDENT CHARACTERISTICS OF A PIN AVALANCHE PHOTO-DIODE (APD) IN GE, SI AND GAAS
    SU, YK
    CHANG, CY
    WU, TS
    OPTICAL AND QUANTUM ELECTRONICS, 1979, 11 (02) : 109 - 117
  • [25] PLANAR TYPE VAPOR-PHASE EPITAXIAL IN0.53GA0.47AS PHOTO-DIODE
    SUSA, N
    YAMAUCHI, Y
    ANDO, H
    KANBE, H
    ELECTRON DEVICE LETTERS, 1980, 1 (04): : 55 - 57
  • [26] A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver
    Ryynanen, Kaisa
    Stadius, Kari
    Bergman, Jan
    Kaval, Goksu
    Lasser, Gregor
    Vassilev, Vessen
    Fager, Christian
    Ryynanen, Jussi
    2024 31ST IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, ICECS, 2024,
  • [27] MONOLITHIC INTEGRATION OF AN ALGAAS/GAAS SURFACE EMITTING LASER DIODE AND A PHOTODETECTOR
    CHEN, CH
    LEE, SC
    APPLIED PHYSICS LETTERS, 1991, 59 (27) : 3592 - 3594
  • [28] MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration
    Passenberg, W
    Schlaak, W
    Umbach, A
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 235 - 238
  • [29] HIGH-SPEED GAAIAS/GAAS P-I-N PHOTO-DIODE ON A SEMI-INSULATING GAAS SUBSTRATE
    BARCHAIM, N
    LAU, KY
    URY, I
    YARIV, A
    APPLIED PHYSICS LETTERS, 1983, 43 (03) : 261 - 262
  • [30] TEMPERATURE-DEPENDENT CHARACTERISTICS OF A REACH-THROUGH AVALANCHE PHOTO-DIODE (RAPD) IN GE, SI AND GAAS
    SU, YK
    CHANG, CY
    WU, TS
    LIU, BD
    OPTICAL AND QUANTUM ELECTRONICS, 1979, 11 (05) : 377 - 384