RECOMBINATION OF CARRIERS AT DISLOCATIONS AND RADIATION DEFECTS IN P-TYPE SI

被引：0
|
作者：
KAZAKEVICH, LA
LUGAKOV, PF
FILIPPOV, IM
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：454 / 456
页数：3
相关论文
共 50 条
  • [41] RADIATION DEFECTS IN P-TYPE SILICON IRRADIATED WITH 30 MEV PROTONS
    GRIGOREVA, GM
    KOLODIN, LG
    KREININ, LB
    MUKASHEV, BN
    NUSUPOV, KK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (11): : 1278 - 1280
  • [42] ANNEALING OF RADIATION-INDUCED DEFECTS IN P-TYPE GERMANIUM SAMPLES
    BASMAN, AR
    GERASIMOV, AB
    DOLIDZE, ND
    KAKHIDZE, NG
    KONOVALENKO, BM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1222 - 1223
  • [43] DISLOCATIONS IN RECRYSTALLIZED P-TYPE GERMANIUM FILMS
    KIRYANOV.VM
    KHUKHRYA.YP
    SHCHEVEL.MI
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 2011 - &
  • [44] ELECTRIC PROPERTIES OF DISLOCATIONS IN P-TYPE GERMANIUM
    KRYLOW, J
    PHYSICA STATUS SOLIDI, 1969, 32 (02): : 589 - +
  • [45] Effect of point defects on the recombination activity of copper precipitates in p-type Czochralski silicon
    Wang, Weiyan
    Yang, Deren
    Yu, Xuegong
    Que, Duanlin
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2008, 19 : S32 - S35
  • [46] Electrical characterization of defects in p-type SiC using recombination induced conductivity inversion
    Krishnan, B
    Koshka, Y
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 551 - 554
  • [47] Effect of point defects on the recombination activity of copper precipitates in p-type Czochralski silicon
    Wang W.
    Yang D.
    Yu X.
    Que D.
    Journal of Materials Science: Materials in Electronics, 2008, 19 (SUPPL. 1) : S32 - S35
  • [48] METHOD OF DETERMINING METAL CONTAMINATION BY COMBINING P-TYPE SI AND N-TYPE SI RECOMBINATION LIFETIME MEASUREMENTS
    ITSUMI, M
    APPLIED PHYSICS LETTERS, 1993, 63 (08) : 1095 - 1097
  • [49] DEFECTS IN POROUS P-TYPE SI - AN ELECTRON-PARAMAGNETIC-RESONANCE STUDY
    VONBARDELEBEN, HJ
    STIEVENARD, D
    GROSMAN, A
    ORTEGA, C
    SIEJKA, J
    PHYSICAL REVIEW B, 1993, 47 (16): : 10899 - 10902
  • [50] Vacancy-oxygen defects in p-type Si1-xGex
    Sgourou, E. N.
    Londos, C. A.
    Chroneos, A.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (13)
12345