CHARGE STORAGE IN METAL-SILICON NITRIDE-SILICON CAPACITORS

被引：4
|
作者：
HUTCHINS, CL
LADE, RW
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 08期
关键词：
D O I：
10.1109/PROC.1967.5861
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1494 / &
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