SIMULATIONS OF METALORGANIC CHEMICAL VAPOR-DEPOSITION AND OF CLUSTER FORMATION ON GAAS

被引：5

作者：

MENON, M ^{[1
]}

ALLEN, RE ^{[1
]}

机构：

[1] TEXAS A&M UNIV,DEPT PHYS,CTR THEORET PHYS,COLLEGE STN,TX 77843

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：729 / 732

页数：4

共 50 条

[1] METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF ZNTE ON GAAS
TOMPA, GS
SUMMERS, CJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 903 - 906
[2] GROWTH OF INSB ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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HEBNER, GA
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) : 272 - 278
[3] REACTIVE CHEMICAL INTERMEDIATES IN METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS
KILLEEN, KP
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (15) : 1864 - 1866
[4] METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1982, 12 : 243 - 269
[5] METALORGANIC CHEMICAL VAPOR-DEPOSITION
MILLER, LM
COLEMAN, JJ
[J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 15 (01): : 1 - 26
[6] SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS PLANAR TECHNOLOGY
NAKAI, K
OZEKI, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 200 - 205
[7] PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS
HUELSMAN, AD
REIF, R
FONSTAD, CG
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 206 - 208
[8] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF PBTE FILMS ON GAAS SUBSTRATES
POLLARD, KT
ERBIL, A
SUDHARSANAN, R
PERKOWITZ, S
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) : 6136 - 6139
[9] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
WANG, CH
CHENG, KY
YANG, SJ
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 962 - 964
[10] GAAS POWER MESFETS PREPARED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
SHINO, T
YANAGAWA, S
YAMADA, Y
ARAI, K
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CHIGIRA, T
NAKANISI, T
[J]. ELECTRONICS LETTERS, 1981, 17 (20) : 738 - 739

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