ANALYSIS OF DC CHARACTERISTICS OF GAALAS-GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：13
|
作者：
ANKRI, D
AZOULAY, R
CAQUOT, E
DANGLA, J
DUBON, C
PALMIER, JF
机构：
[1] CNET, Lab de Bagneux, Bagneux, Fr, CNET, Lab de Bagneux, Bagneux, Fr
来源：
SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 02期
关键词：
D O I：
10.1016/0038-1101(86)90032-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
14
引用
收藏
页码：141 / 149
页数：9
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