DETERMINATION OF QUASI-FERMI LEVEL AT THE METAL-SEMICONDUCTOR INTERFACE IN A FORWARD-BIASED SCHOTTKY-BARRIER DIODE

被引：1
|
作者：
SIMEONOV, SS
IVANOVITCH, MD
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 80卷 / 01期
关键词：
D O I：
10.1002/pssa.2210800107
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：79 / 84
页数：6
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