INVESTIGATION OF IMPURITY STATES IN PBTE DOPED BY AL

被引：0
|
作者：
VEIS, AN
GLEBOVA, YV
机构：
来源：
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1983年 / 26卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：117 / 119
页数：3
相关论文
共 50 条
  • [31] STUDY OF IMPURITY STATES IN PBTE DOPED WITH 3RD GROUP ELEMENTS BY LOW-TEMPERATURE SPECIFIC-HEAT METHOD
    KONSTANTINOV, PP
    LYKOV, SN
    RAVICH, YI
    CHERNIK, IA
    FIZIKA TVERDOGO TELA, 1982, 24 (12): : 3530 - 3534
  • [32] Far infrared study of impurity local modes in palladium-doped PbTe and PbSnTe
    Nikolic, P. M.
    Paraskevopoulos, K. M.
    Djukic, S. R.
    Vujatovic, S. S.
    Labus, N. J.
    Zorba, T. T.
    Jovic, M.
    Nikolic, M. V.
    Bojcic, A.
    Blagojevic, V.
    Stamenovic, B.
    Koenig, W.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 475 (1-2) : 930 - 934
  • [33] Far-infrared study of impurity local modes in Ni-doped PbTe
    Romcevic, N.
    Trajic, J.
    Kuznetsova, T. A.
    Romcevic, M.
    Hadzic, B.
    Khokhlov, D. R.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2007, 442 (1-2) : 324 - 327
  • [34] Far-infrared study of impurity local modes in Co-doped PbTe
    Trajic, J.
    Romcevic, N.
    Romcevic, M.
    Stojanovic, D.
    Rudolf, R.
    Kuznetsova, T. A.
    Khokhlov, D. R.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 493 (1-2) : 41 - 46
  • [35] Far-infrared study of impurity local modes in gallium-doped PbTe
    Romčević, N.
    Romčević, M.
    Khokhlov, D.R.
    Belogorokhov, A.I.
    Ivanchik, I.I.
    König, W.
    Infrared Physics and Technology, 1999, 40 (06): : 453 - 462
  • [36] INVESTIGATION OF ABSORPTION-COEFFICIENT OF INDIUM-DOPED PBTE
    VEIS, AN
    KAIDANOV, VI
    RAVICH, YI
    RYABTSEVA, IA
    UKHANOV, YI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 62 - 65
  • [37] Nature of impurity states in doped amorphous silicon
    Allan, G
    Delerue, C
    Lannoo, M
    PHYSICAL REVIEW B, 2000, 61 (15): : 10206 - 10210
  • [38] CLUSTER MODEL OF IMPURITY STATES IN DOPED SEMICONDUCTORS
    FERREIRADASILVA, A
    RIKLUND, R
    CHAO, KA
    PROGRESS OF THEORETICAL PHYSICS, 1979, 62 (03): : 584 - 594
  • [39] ELECTRONIC IMPURITY STATES IN TE DOPED BISMUTH
    SMITH, BT
    SIEVERS, AJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (04): : 463 - 463
  • [40] IMPURITY STATES IN COBALT-DOPED SILICON
    EVWARAYE, AO
    JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) : 383 - 401
12345