PIEZORESISTIVE EFFECT OF DIAMOND FILMS PRODUCED BY DC PLASMA CVD

被引：6
|
作者：
WANG, WL
LIAO, KJ
机构：
[1] Department of Physics, Lanzhou University, Lanzhou
来源：
CHINESE PHYSICS LETTERS | 1994年 / 11卷 / 09期
关键词：
D O I：
10.1088/0256-307X/11/9/017
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The piezoresistive effect of polycrystalline p-type diamond films formed by de plasma chemical vapour deposition has been investigated. The gauge factor is about 116 at 500 microstrains at room temperature, and strongly increases with increasing temperature, exceeding that of polycrystalline- and single-silicon, The origin of the piezoresistivity in boron doped polycrystalline diamond films may be ascribed to strain-induced shift of the boron acceptor level and grain boundaries.
引用
收藏
页码：589 / 592
页数：4
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