Calculation of the radiative lifetime of Wannier-Mott excitons in nanoclusters

被引：0

作者：

Kukushkin, Vladimir A. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Inst Appl Phys, Dept Plasma Phys & High Power Elect, 46 Ulyanov st, Nizhnii Novgorod 603950, Russia

[2] Nizhny Novgorod State Univ NI Lobachevsky, Adv Sch Gen & Appl Phys, Nizhnii Novgorod 603950, Russia

来源：

ADVANCES IN NANO RESEARCH | 2013年 / 1卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

exciton radiative lifetime; nanoclusters; Wannier-Mott excitons;

D O I：

10.12989/anr.2013.1.3.125

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This study is aimed to calculate the radiative lifetime of Wannier-Mott excitons in nanoclusters of a narrow-bandgap semiconductor embedded in a wide-bandgap one. The nanocluster linear dimensions are assumed to be much larger than the radius of the exciton so that the latter is not destructed by the confinement potential as it takes place in small quantum dots. The calculations were carried out for an example of InAs nanoclusters put into the GaAs matrix. It is shown that the radiative lifetime of WannierMott excitons in such clusters increases with the decrease of the cluster dimensions, this tendency being more pronounced at low temperatures. So, the creation of excitons in nanoclusters of a narrow-bandgap material embedded in a wide-bandgap one can be used to significantly prolong their radiative lifetime in comparison with that of excitons in a bulk semiconductor.

引用

页码：125 / 131

页数：7

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