ETCHING CHARACTERIZATION OF (001) SEMI-INSULATING GAAS WAFERS

被引：13
|
作者：
OKADA, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1983年 / 22卷 / 03期
关键词：
D O I：
10.1143/JJAP.22.413
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：413 / 417
页数：5
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