LIGHT EMISSION ASSOCIATED WITH BREAKDOWN IN SILICON CARBIDE P-N JUNCTIONS

被引：0

|

作者：

KHOLUYANOV, GF

机构：

来源：

SOVIET PHYSICS-SOLID STATE | 1962年 / 3卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：2405 / 2407

页数：3

相关论文

共 50 条

[21] ELECTRON EMISSION FROM SILICON P-N JUNCTIONS
TAUC, J
[J]. NATURE, 1958, 181 (4601) : 38 - 38
[22] Kinetics of breakdown electroluminescence in silicon carbide p-n structures
Genkin, AM
Genkina, VK
Germash, LP
[J]. TECHNICAL PHYSICS, 2000, 45 (04) : 432 - 435
[23] Kinetics of breakdown electroluminescence in silicon carbide p-n structures
A. M. Genkin
V. K. Genkina
L. P. Germash
[J]. Technical Physics, 2000, 45 : 432 - 435
[24] COHERENT LIGHT EMISSION FROM P-N JUNCTIONS
HALL, RN
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (05) : 405 - &
[25] BREAKDOWN LOCALIZATION IN P-N JUNCTIONS
ANUPYLD, AY
GORYUNOV, NN
DMITRIYE.AI
[J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 934 - +
[26] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
SUNOHARA, Y
[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
[27] ELECTRON EMISSION FROM BREAKDOWN REGIONS IN SIC P-N JUNCTIONS
PATRICK, L
CHOYKE, WJ
[J]. PHYSICAL REVIEW LETTERS, 1959, 2 (02) : 48 - 50
[28] INHOMOGENEITY OF SURFACE CHARGE AND SURFACE BREAKDOWN IN SILICON P-N JUNCTIONS
LITVINOV, RO
SADOVNIC.AA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 462 - &
[29] GATE-CONTROLLED SURFACE BREAKDOWN IN SILICON P-N JUNCTIONS
GRAAFF, HCD
[J]. PHILIPS RESEARCH REPORTS, 1970, 25 (01): : 21 - +
[30] EFFECTIVE CARRIER IONIZATION COEFFICIENT IN SILICON P-N JUNCTIONS AT BREAKDOWN
HALL, R
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1967, 22 (06) : 521 - &

← 1 2 3 4 5 →