ANALYSIS OF DEFECT-ASSISTED TUNNELING BASED ON LOW-FREQUENCY NOISE MEASUREMENTS OF RESONANT TUNNEL-DIODES

被引：18
|
作者：
WEICHOLD, MH [1 ]
VILLAREAL, SS [1 ]
LUX, RA [1 ]
机构：
[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 07期
关键词：
D O I：
10.1063/1.101813
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：657 / 659
页数：3
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