ANALYSIS OF DEFECT-ASSISTED TUNNELING BASED ON LOW-FREQUENCY NOISE MEASUREMENTS OF RESONANT TUNNEL-DIODES

被引：18

作者：

WEICHOLD, MH ^{[1
]}

VILLAREAL, SS ^{[1
]}

LUX, RA ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 07期

关键词：

D O I：

10.1063/1.101813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：657 / 659

页数：3

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