X-RAY STUDY OF SI CRYSTALS IRRADIATED BY FAST URANIUM IONS

被引：0
|
作者：
AULEYTNER, J
BAKMISIUK, J
FURMANIK, Z
TOULEMONDE, M
VETTER, J
机构：
[1] CIRIL,F-140040 CAEN,FRANCE
[2] GSI DARMSTADT,W-6100 DARMSTADT,GERMANY
来源：
NUCLEAR TRACKS AND RADIATION MEASUREMENTS | 1991年 / 19卷 / 1-4期
关键词：
61.80; 61.10; 61.16; S5.11; S11.2;
D O I：
暂无
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Dislocation free Si crystals implanted with 16 MeV/n U-ions using Darmstadt accelerator have been investigated by X-ray diffraction methods. X-ray section topography showed that the induced damage range is a little larger than theoretically calculated U-ion range. The created defects cause the volume increase in the implanted part of the crystals. For the dose 1.9.10(12) i/cm2 the increase of lattice constant is: 1.4.10(-5) +/- 5.10(-6) angstrom and for the dose 4.4.10(12) - 2.4.10(-5) +/- 5.10(-6) angstrom.
引用
收藏
页码：803 / 806
页数：4
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