IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS

被引：6
|
作者：
WU, JS
LEE, CP
CHANG, CY
CHANG, KH
LIU, DG
LIOU, DC
机构：
[1] Institute of Electronics, National Chiao Tung University, Hsin-Chu
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 02期
关键词：
D O I：
10.1063/1.347385
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-mu-m undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.
引用
收藏
页码：1122 / 1123
页数：2
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