DESIGN CONSIDERATION FOR A 2-MU-M-PERIOD ION-IMPLANTED PROPAGATION TRACK

被引：1
|
作者：
SATOH, Y
MIYASHITA, T
OHASHI, M
BETSUI, K
KOMENOU, K
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期
关键词：
D O I：
10.1063/1.334678
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4080 / 4080
页数：1
相关论文
共 50 条
  • [21] ANNEALING OF ION-IMPLANTED SILICON BY 2,94 MU-M LASER-RADIATION
    GOLOVATCH, DG
    MANENKOV, AA
    MIKHAILOVA, GN
    POPOV, SY
    SEFEROV, AS
    KHAIBULLIN, IB
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1988, 52 (09): : 1826 - 1829
  • [22] DYNAMICS OF 1-MU-M BUBBLES IN ION-IMPLANTED CONTIGUOUS DISK STRUCTURES
    SANDERS, IL
    KRYDER, MH
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 2252 - 2257
  • [23] Design consideration for ion-implanted planar GaAs blocked-impurity-band detectors
    Zhang, Yun
    Wang, Xiaodong
    Wang, Bingbing
    Hou, Liwei
    Chen, Xiaoyao
    Kuang, Yawei
    Pan, Ming
    2016 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2016, : 49 - 50
  • [24] 2-DIMENSIONAL SIMULATION OF SUB-MU-M GAAS-MESFETS WITH ION-IMPLANTED DOPING
    FENG, YK
    SCHUNEMANN, K
    SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1719 - 1722
  • [25] 1.54 MU-M ELECTROLUMINESCENCE IN MEV ION-IMPLANTED ER-DOPED GAAS
    KLEIN, PB
    MOORE, FG
    DIETRICH, HB
    ELECTRONICS LETTERS, 1990, 26 (16) : 1299 - 1300
  • [26] STRETCHING AND SENSING OF 1-MU-M BUBBLES IN ION-IMPLANTED CONTIGUOUS DISK DEVICES
    MAZZEO, NJ
    SANDERS, IL
    KRYDER, MH
    DEUTSCH, A
    IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (06) : 1905 - 1910
  • [27] DESIGN AND EVALUATION OF ION-IMPLANTED CMOS STRUCTURES
    MOTAMEDI, ME
    TAM, KY
    STECKL, AJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (03) : 578 - 583
  • [28] ION-IMPLANTED BUBBLE CIRCUIT FUNCTION DESIGN
    NELSON, TJ
    BONYHARD, PI
    GEUSIC, JE
    HAGEDORN, FB
    JOHNSON, WA
    WAGNER, WDP
    IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) : 1134 - 1141
  • [29] 0.25-MU-M GATE MILLIMETER-WAVE ION-IMPLANTED GAAS-MESFETS
    WANG, GW
    FENG, M
    LAU, CL
    ITO, C
    LEPKOWSKI, TR
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) : 186 - 188
  • [30] OPERATION TEMPERATURE RANGES FOR ION-IMPLANTED BUBBLE-DEVICES WITH 1-MU-M BUBBLES
    MIZUNO, K
    URAI, H
    IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (05) : 1706 - 1708
12345