LOW-THRESHOLD OPERATION OF ALGAAS/GAAS MULTIPLE QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引:19
|
作者
CHONG, TC [1 ]
FONSTAD, CG [1 ]
机构
[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
关键词
D O I
10.1063/1.98481
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:221 / 223
页数:3
相关论文
共 50 条
  • [31] CHARACTERISTICS OF MODULATION-DOPED QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    SHANK, SM
    VARRIANO, JA
    KOCH, MW
    WICKS, GW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 952 - 954
  • [32] QUANTUM-WELL GAAS/ALGAAS SHALLOW-DONOR FAR-INFRARED PHOTOCONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY
    GOODHUE, WD
    MUELLER, ER
    LARSEN, DM
    WALDMAN, J
    CHAI, YH
    LAI, SC
    JOHNSON, GD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 941 - 944
  • [33] MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS ON SI
    TSAUR, BY
    METZE, GM
    APPLIED PHYSICS LETTERS, 1984, 45 (05) : 535 - 536
  • [34] SHORT WAVELENGTH (VISIBLE) GAAS QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    WOODBRIDGE, K
    BLOOD, P
    FLETCHER, ED
    HULYER, PJ
    APPLIED PHYSICS LETTERS, 1984, 45 (01) : 16 - 18
  • [35] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS QUANTUM WELLS ON CHANNELED SUBSTRATES
    MEIER, HP
    VANGIESON, E
    WALTER, W
    HARDER, C
    KRAHL, M
    BIMBERG, D
    APPLIED PHYSICS LETTERS, 1989, 54 (05) : 433 - 435
  • [36] GAAS-ALGAAS MQW AND GRINSCH LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    WEIMANN, G
    SCHLAPP, W
    PHYSICA B & C, 1985, 129 (1-3): : 459 - 464
  • [37] NEAR-IDEAL LOW-THRESHOLD CURRENT IN (111)-ORIENTED GAAS/ALGAAS QUANTUM-WELL LASERS
    SUYAMA, T
    HAYAKAWA, T
    KONDO, M
    TAKAHASHI, K
    YAMAMOTO, S
    HIJIKATA, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2378 - 2378
  • [38] LOW-THRESHOLD CURRENT ALGAAS GAAS-DISTRIBUTED FEEDBACK LASER GROWN BY 2-STEP MOLECULAR-BEAM EPITAXY
    KOJIMA, K
    NODA, S
    MITSUNAGA, K
    KYUMA, K
    NAKAYAMA, T
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (05) : 507 - 512
  • [39] HIGH-POWER SINGLE-MODE STRAINED SINGLE QUANTUM-WELL INGAAS ALGAAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON NONPLANAR SUBSTRATES
    ARENT, DJ
    BROVELLI, L
    JACKEL, H
    MARCLAY, E
    MEIER, HP
    APPLIED PHYSICS LETTERS, 1990, 56 (20) : 1939 - 1941
  • [40] INFLUENCES OF DARK LINE DEFECTS ON CHARACTERISTICS OF ALGAAS/GAAS QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES
    HASEGAWA, Y
    EGAWA, T
    JIMBO, T
    UMENO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (6A): : 2994 - 2999