INPLANE EFFECTIVE MASSES AND QUANTUM SCATTERING TIMES OF ELECTRONS IN NARROW MODULATION-DOPED INGAAS/INP QUANTUM-WELLS

被引：16

作者：

WIESNER, U ^{[1
]}

PILLATH, J ^{[1
]}

BAUHOFER, W ^{[1
]}

KOHL, A ^{[1
]}

KUSTERS, AM ^{[1
]}

BRITTNER, S ^{[1
]}

HEIME, K ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,D-52074 AACHEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 19期

关键词：

D O I：

10.1063/1.111560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In-plane effective masses m(parallel-to)* and quantum scattering times are derived from temperature-dependent Shubnikov-de Haas oscillations measured on a series of modulation-doped InxGa1-xAs/InP quantum wells with x=0.53 and 0.75, and for well widths ranging from 3 to 7 nm. The values for m(parallel-to)* are consistently higher by 30%-70% than the respective bulk data. This result is in good agreement with recent theoretical calculations which predict an increase of m(parallel-to)* with decreasing well width. The scatter of the mass values for nominally identical quantum wells is assumed to reflect corresponding variations of the well widths. The ratio of quantum to classical scattering times and the carrier density dependence of the electron mobilities indicate that Coulomb scattering is important even in extremely narrow quantum wells.

引用

页码：2520 / 2522

页数：3

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