共 50 条
- [1] Determination of the arrhenius parameters for Si2H6 SiH4 + SiH2 and ΔH°(SiH2) by RRKM analysis of forward and reverse reaction rate data Journal of Physical Chemistry, 1992, 96 (19):
- [2] ESTIMATION OF THE ARRHENIUS PARAMETERS FOR SIH4 REVERSIBLE SIH2+H-2 AND DELTA-HFO (SIH2) BY A NONLINEAR-REGRESSION ANALYSIS OF THE FORWARD AND REVERSE REACTION-RATE DATA JOURNAL OF PHYSICAL CHEMISTRY, 1991, 95 (01): : 145 - 154
- [4] Measurement and calculation of SiH2 radical density in SiH4 and Si2H6 plasma for the deposition of hydrogenated amorphous silicon thin films 1600, JJAP, Minato-ku, Japan (34):
- [5] STATISTICAL AND NONSTATISTICAL EFFECTS IN BOND FISSION REACTIONS OF SIH2 AND SI2H6 JOURNAL OF CHEMICAL PHYSICS, 1991, 94 (06): : 4219 - 4229
- [7] MEASUREMENT AND CALCULATION OF SIH2 RADICAL DENSITY IN SIH4 AND SI2H6 PLASMA FOR THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON THIN-FILMS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8A): : 4239 - 4246
- [8] Shock tube study of the thermal decomposition of Si2H6 based on Si and SiH2 measurements Berichte der Bunsengesellschaft/Physical Chemistry Chemical Physics, 1995, 99 (06):
- [9] Monitoring of the intermediate products in the thermal decomposition of SiH4, Si2H6, SiF4 and SiH2F2 DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 : 39 - 44