MODEL OF RESIDUAL PHOTOCONDUCTIVITY - GALLIUM-ARSENIDE

被引：0
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作者：
DOBREGO, VP [1 ]
机构：
[1] VI LENIN STATE UNIV,MINSK,BESSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 10期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1309 / 1310
页数：2
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