ALGAINP/GAINP DOUBLE-HETEROSTRUCTURE ORANGE LIGHT-EMITTING-DIODES ON GAASP SUBSTRATES PREPARED BY METALORGANIC VAPOR-PHASE EPITAXY

被引：7
|
作者：
LIN, JF
WU, MC
JOU, MJ
CHANG, CM
LEE, BJ
机构：
[1] NATL TSING HUA UNIV,ELECT ENGN RES INST,HSINCHU 30043,TAIWAN
[2] IND TECHNOL RES INST,OPTOELECTR & SYST LABS,HSINCHU 31015,TAIWAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 137卷 / 3-4期
关键词：
D O I：
10.1016/0022-0248(94)90977-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Al0.33Ga0.32In0.35P/Ga0.65In0.35P double-heterostructure (DH) light-emitting diodes (LEDs) grown on GaAs0.7P0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. We investigate the band gap energy as a function of Al composition in the undoped Al(x)Ga0.65-xIn0.35P alloy with x = 0.0-0.195. Effects of Si and Zn doping on electrical properties have been examined by using disilane and dimethylzinc sources. The DH LED on a bare chip exhibits an emission wavelength around 615 nm and an external quantum efficiency of 0.156% at 20 mA.
引用
收藏
页码：400 / 404
页数：5
相关论文
共 50 条
  • [31] Cubic InGaN/GaN double-heterostructure light emitting diodes grown on GaAs (001) substrates by MOVPE
    Taniyasu, Y.
    Suzuki, K.
    Lim, D.H.
    Jia, A.W.
    Shimotomai, M.
    Kato, Y.
    Kobayashi, M.
    Yoshikawa, A.
    Takahashi, K.
    2000, Wiley-VCH Verlag Berlin GmbH, Weinheim, Germany (180):
  • [32] (AL0.5GA0.5)0.65IN0.35P/GA0.65IN0.35P DOUBLE-HETEROSTRUCTURE ORANGE LIGHT-EMITTING-DIODES
    LIN, JF
    WU, MC
    JOU, MJ
    CHANG, CM
    LEE, BJ
    ELECTRONICS LETTERS, 1993, 29 (15) : 1346 - 1347
  • [33] CARRIER LIFETIME IN (AL,GA)AS EPILAYERS AND DOUBLE HETEROSTRUCTURE LASERS GROWN WITH METALORGANIC VAPOR-PHASE EPITAXY AND LIQUID-PHASE EPITAXY
    THOOFT, GW
    VANOPDORP, C
    VINK, AT
    ACTA ELECTRONICA, 1983, 25 (03): : 193 - 200
  • [34] Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
    Kinoshita, Toru
    Hironaka, Keiichiro
    Obata, Toshiyuki
    Nagashima, Toru
    Dalmau, Rafael
    Schlesser, Raoul
    Moody, Baxter
    Xie, Jinqiao
    Inoue, Shin-ichiro
    Kumagai, Yoshinao
    Koukitu, Akinori
    Sitar, Zlatko
    APPLIED PHYSICS EXPRESS, 2012, 5 (12)
  • [35] High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy
    Tadatomo, K
    Okagawa, H
    Ohuchi, Y
    Tsunekawa, T
    Imada, Y
    Kato, M
    Taguchi, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (6B): : L583 - L585
  • [36] High output power InGaN ultraviolet light plus emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy
    Tadatomo, K
    Okagawa, H
    Ohuchi, Y
    Tsunekawa, T
    Jyouichi, T
    Imada, Y
    Kato, M
    Kudo, H
    Taguchi, T
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (01): : 121 - 125
  • [37] Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy
    Feltin, E. (ef@crhea.cnrs.fr), 1600, Japan Society of Applied Physics (40):
  • [38] Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy
    Feltin, E
    Dalmasso, S
    de Mierry, P
    Beaumont, B
    Lahrèche, H
    Bouillé, A
    Haas, H
    Leroux, M
    Gibart, P
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (7B): : L738 - L740
  • [39] ALGAAS HETEROJUNCTION VISIBLE (700 NM) LIGHT-EMITTING-DIODES ON SI SUBSTRATES FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    HASHIMOTO, A
    KAWARADA, Y
    KAMIJOH, T
    AKIYAMA, M
    WATANABE, N
    SAKUTA, M
    APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1617 - 1619
  • [40] NONEQUIVALENT HETEROINTERFACES IN AIGAAS/GAAS DOUBLE BARRIER RESONANT TUNNELING DIODES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    TEWS, H
    SCHNELL, RD
    NEUMANN, R
    ELECTRONICS LETTERS, 1989, 25 (25) : 1709 - 1711
12345