ALGAINP/GAINP DOUBLE-HETEROSTRUCTURE ORANGE LIGHT-EMITTING-DIODES ON GAASP SUBSTRATES PREPARED BY METALORGANIC VAPOR-PHASE EPITAXY

被引：7
|
作者：
LIN, JF
WU, MC
JOU, MJ
CHANG, CM
LEE, BJ
机构：
[1] NATL TSING HUA UNIV,ELECT ENGN RES INST,HSINCHU 30043,TAIWAN
[2] IND TECHNOL RES INST,OPTOELECTR & SYST LABS,HSINCHU 31015,TAIWAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 137卷 / 3-4期
关键词：
D O I：
10.1016/0022-0248(94)90977-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Al0.33Ga0.32In0.35P/Ga0.65In0.35P double-heterostructure (DH) light-emitting diodes (LEDs) grown on GaAs0.7P0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. We investigate the band gap energy as a function of Al composition in the undoped Al(x)Ga0.65-xIn0.35P alloy with x = 0.0-0.195. Effects of Si and Zn doping on electrical properties have been examined by using disilane and dimethylzinc sources. The DH LED on a bare chip exhibits an emission wavelength around 615 nm and an external quantum efficiency of 0.156% at 20 mA.
引用
收藏
页码：400 / 404
页数：5
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