RECOMBINATION-ENHANCED IMPURITY DIFFUSION IN BE-DOPED GAAS

被引：69
|
作者：
UEMATSU, M
WADA, K
机构：
[1] NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 18期
关键词：
D O I：
10.1063/1.105025
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Recombination-enhanced impurity diffusion (REID) in Be-doped GaAs has been observed for the first time. Current-induced degradation of tunnel diodes has been investigated. The Be diffusion under forward bias is enhanced by a factor of about 10(15) at room temperature, and the activation energy for the diffusion is reduced from 1.8 eV for thermal diffusion to 0.6 eV for REID. The REID of Be, in which the energy released on minority-carrier injection at the recombination center could enhance the diffusion, is thought to be the origin of the degradation.
引用
收藏
页码：2015 / 2017
页数：3
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