Effects of reductive annealing on insulating polycrystalline thin films of Nb-doped anatase TiO2: recovery of high conductivity

被引：4
|
作者：
Nakao, Shoichiro [1 ,2 ]
Hirose, Yasushi [1 ,2 ,3 ]
Hasegawa, Tetsuya [1 ,2 ,3 ]
机构：
[1] Kanagawa Acad Sci & Technol, Kawasaki, Kanagawa 2130012, Japan
[2] Japan Sci & Technol Agcy, CREST, Bunkyo Ku, Tokyo 1130033, Japan
[3] Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan
来源：
JOURNAL OF SEMICONDUCTORS | 2016年 / 37卷 / 02期
关键词：
transparent conductive oxide; Nb-doped TiO2; pulsed laser deposition;
D O I：
10.1088/1674-4926/37/2/022001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We studied the effects of reductive annealing on insulating polycrystalline thin films of anatase Nb-doped TiO2 (TNO). The insulating TNO films were intentionally fabricated by annealing conductive TNO films in oxygen ambient at 400 degrees C. Reduced free carrier absorption in the insulating TNO films indicated carrier compensation due to excess oxygen. With H-2-annealing, both carrier density and Hall mobility recovered to the level of conducting TNO, demonstrating that the excess oxygen can be efficiently removed by the annealing process without introducing additional scattering centers.
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收藏
页数：4
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