MAGNETOPHOTOLUMINESCENCE OF ACCEPTOR NEAR THE INTERFACE OF ALXGA1-XAS/ALYGA1-YAS HETEROSTRUCTURE SPONTANEOUSLY GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：0

作者：

ZHU, JB ^{[1
]}

JEON, HI ^{[1
]}

CHA, SS ^{[1
]}

SHIN, YG ^{[1
]}

LEE, BC ^{[1
]}

LIM, KY ^{[1
]}

SUH, EK ^{[1
]}

LEE, HJ ^{[1
]}

机构：

[1] JEONBUK NATL UNIV,DEPT PHYS,CHONJU 560756,SOUTH KOREA

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1995年 / 28卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Photoluminescence of AlxGa1-xAs/AlyGa1-yAs heterostructures was performed in the presence of high magnetic field. The broad carbon related peak was resolved into several narrow peaks under the magnetic field. Various experimental evidences suggest that these peaks are due to the recombination of free electron with bound hole of neutral carbon accepters distributed on the discrete atomic layers near the interface of the heterostructure. Magnetic field reduces the broadening of carbon related peaks caused by the interfacial roughness. Theoretical calculations are performed with single band model. The relation between the widths of carbon related peaks with the size of interfacial terraces and magnetic field predicts a possible method to measure the size of interfacial terrace with magneto-photoluminescence technique.

引用

页码：S184 / S187

页数：4

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