EQUILIBRIUM STRUCTURE OF MONATOMIC STEPS ON VICINAL SI(001)

被引:90
|
作者
ZANDVLIET, HJW
ELSWIJK, HB
VANLOENEN, EJ
DIJKKAMP, D
机构
[1] Philips Research Laboratories, 5600 JA Eindhoven
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 11期
关键词
D O I
10.1103/PhysRevB.45.5965
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The equilibrium structure of monatomic steps on vicinal Si(001) is described in terms of anisotropic nearest-neighbor and isotropic second-nearest-neighbor interactions between dimers. By comparing scanning-tunneling-microscopy data and this equilibrium structure, we obtained interaction energies of 0.38 eV between dimers in a row, 0.24 eV between sets of two dimers in adjacent rows, and -0.07 eV for the diagonal interaction between dimers in adjacent rows.
引用
收藏
页码:5965 / 5968
页数:4
相关论文
共 50 条
  • [31] MONOLAYER AND BILAYER HIGH STEPS ON SI(001)2X1 VICINAL SURFACE
    NAKAYAMA, T
    TANISHIRO, Y
    TAKAYANAGI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1186 - L1188
  • [32] MONOLAYER AND BILAYER HIGH STEPS ON Si(001)2 multiplied by 1 VICINAL SURFACE.
    Nakayama, Tomonobu
    Tanishiro, Yasumasa
    Takayanagi, Kunio
    Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (07):
  • [33] WAVY STEPS ON SI(001)
    TROMP, RM
    REUTER, MC
    PHYSICAL REVIEW LETTERS, 1992, 68 (06) : 820 - 822
  • [34] TEM study of the structure of GaAs on vicinal Si(001) surface grown by MBE
    Chinese Acad of Sciences, Beijing, China
    J Mater Sci, 3 (829-833):
  • [35] Anisotropic strain effect on morphology and atomic structure of vicinal Si(001) surface
    Chang, CS
    Tsong, TT
    PROGRESS IN SURFACE SCIENCE, 1997, 54 (3-4) : 387 - 405
  • [36] Equilibrium and nonequilibrium hydrogen coverages on vicinal Si(001) surfaces:: Diffusion barriers and binding energies
    Raschke, MB
    Höfer, U
    PHYSICAL REVIEW B, 1999, 59 (04): : 2783 - 2789
  • [37] SURFACE STEP STRUCTURE OF A LENS-SHAPED SI(001) VICINAL SUBSTRATE
    SAKAMOTO, K
    MIKI, K
    SAKAMOTO, T
    THIN SOLID FILMS, 1989, 183 : 229 - 233
  • [38] TEM study of the structure of GaAs on vicinal Si(001) surface grown by MBE
    Yang, Y
    Chen, H
    Zhou, YQ
    Mei, XB
    Huang, Q
    Zhou, JM
    Li, FH
    JOURNAL OF MATERIALS SCIENCE, 1996, 31 (03) : 829 - 833
  • [39] OBSERVATION OF SI(001) VICINAL SURFACES ON RHEED
    SAKAMOTO, K
    SAKAMOTO, T
    MIKI, K
    NAGAO, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (09) : 2705 - 2710
  • [40] Epioptic studies of vicinal Si(001)-Ga
    McGilp, JF
    Chandola, S
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1998, 20 (7-8): : 1019 - 1024