TEMPERATURE CHARACTERISTICS OF INGAASP LASER-DIODES AND LIGHT-EMITTING-DIODES

被引：0

|

作者：

KAMIYA, T

KAMATA, N

机构：

来源：

JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS | 1983年 / 5卷

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

收藏

页码：59 / 69

页数：11

相关论文

共 50 条

[21] POWER-SUPPLY CIRCUIT FOR SEMICONDUCTOR LIGHT-EMITTING-DIODES AND LASER-DIODES, UTILIZING THE INTRINSIC RADIATION OF THE SOURCE TO STABILIZE THE POWER
LEBEDEV, EA
MARKOV, VI
CHESNOKOV, AG
SOVIET JOURNAL OF OPTICAL TECHNOLOGY, 1988, 55 (02): : 127 - 128
[22] PHOTOMETRY OF DIODE EMITTERS - LIGHT-EMITTING-DIODES AND INFRARED EMITTING DIODES
MURAY, K
APPLIED OPTICS, 1991, 30 (16): : 2178 - 2186
[23] PREPARATION AND PROPERTIES OF MONOLITHICALLY INTEGRATED LENSES ON INGAASP/INP LIGHT-EMITTING-DIODES
HEINEN, J
ELECTRONICS LETTERS, 1982, 18 (19) : 831 - 832
[24] CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES
CHIN, AK
ZIPFEL, CL
MAHAJAN, S
ERMANIS, F
DIGIUSEPPE, MA
APPLIED PHYSICS LETTERS, 1982, 41 (06) : 555 - 557
[25] GRAFTED INGAASP LIGHT-EMITTING-DIODES ON GLASS CHANNEL WAVE-GUIDES
YIYAN, A
CHAN, WK
RAVI, TS
GMITTER, TJ
BHAT, R
YOO, KH
ELECTRONICS LETTERS, 1992, 28 (04) : 341 - 342
[26] LIGHT-EMITTING-DIODES - THE SILICON CHAMELEON
CANHAM, L
NATURE, 1993, 365 (6448) : 695 - 695
[27] ZNSE AND ZNS LIGHT-EMITTING-DIODES
WOODS, J
DISPLAYS, 1981, 2 (05) : 251 - 258
[28] LIGHT-EMITTING-DIODES IN POROUS SILICON
KOZLOWSKI, F
STEINER, P
LANG, W
SANDMAIER, H
SENSORS AND ACTUATORS A-PHYSICAL, 1994, 43 (1-3) : 153 - 156
[29] CITATION CLASSIC - LIGHT-EMITTING-DIODES
BERGH, AA
CURRENT CONTENTS/ENGINEERING TECHNOLOGY & APPLIED SCIENCES, 1984, (45): : 22 - 22
[30] SPECTRAL CHARACTERISTICS OF AU-ZNS LIGHT-EMITTING-DIODES
GORBENKO, NV
TANATAR, MA
SHEINKMAN, MK
YURCHENKO, IA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (11): : 1214 - 1216

← 1 2 3 4 5 →