GROWTH OF CdO AND ZnCdO-BASED NOVEL NANOSTRUCTURES USING ELECTROCHEMICAL DEPOSITION

被引:1
|
作者
Singh, Trilok [1 ]
Pandya, D. K. [1 ]
Singh, R. [1 ]
机构
[1] Indian Inst Technol Delhi, Dept Phys, Hauz Khas, New Delhi 110016, India
关键词
CdO; ZnCdO; nanostructures; annealing; band gap;
D O I
10.1142/S0219581X11009258
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
CdO and ZnCdO alloy semiconductor nanostructures were obtained by means of cathodic deposition. Crystalline nanostructures of CdO and cadmium doped ZnO with cadmium concentration ranging from about 25% to 75% were electrodeposited onto the tin doped indium oxide (ITO) conducting glass substrates and subsequently annealed in air at 300 degrees C and 600 degrees C, respectively. X-ray diffraction showed that the nanostructures were of cubic crystallographic structure for CdO and at low doping concentration it showed wurtzite structure. Energy dispersive X-ray spectroscopy (EDS) results demonstrated that Cd, Zn and O elements existed in the deposited nanostructures. The incorporation of Cd content in the ZnO resulted in the band gap tuning of about 0.94 eV.
引用
收藏
页码:827 / 831
页数:5
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