SWITCH EFFECT OF IRRADIATED PN-JUNCTION

被引:0
|
作者
MACKO, P [1 ]
MUDRON, J [1 ]
BALLO, P [1 ]
机构
[1] MIL TECH UNIV CZECHOSLOVAK SOVIET FRIENDSHIP, DEPT MATH & PHYS, CS-03101 LIPTOVSKY, CZECHOSLOVAKIA
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:303 / 304
页数:2
相关论文
共 50 条
  • [1] EFFECT OF OXYGEN IN SILICON ON PN-JUNCTION CHARACTERISTICS
    GEYER, L
    HEYMANN, G
    CRYSTAL RESEARCH AND TECHNOLOGY, 1981, 16 (08) : 957 - 963
  • [2] PN-JUNCTION TRANSITION REGION
    GUKEL, H
    THOMAS, DC
    DERMIKOL, A
    SOLID-STATE ELECTRONICS, 1979, 22 (09) : 829 - 830
  • [3] HEAVILY DEFFUSED SI PN-JUNCTION
    TOKUNAGA, M
    SHONO, K
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (10) : 2067 - &
  • [4] The magnetoconcentration effect in the base–substrate pn-junction of a bipolar magnetotransistor
    R. D. Tikhonov
    Measurement Techniques, 2009, 52 : 1344 - 1350
  • [5] CHARACTERISTICS OF DISPLACED PN-JUNCTION AND HETEROJUNCTIONS
    XU, JM
    SWEENY, M
    MOORE, WT
    SOLID-STATE ELECTRONICS, 1991, 34 (04) : 423 - 425
  • [6] Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots
    Sato, Shin-ichiro
    Schmieder, Kenneth J.
    Hubbard, Seth M.
    Forbes, David V.
    Warner, Jeffrey H.
    Ohshima, Takeshi
    Walters, Robert J.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (18)
  • [7] Graphene Hall bar with an asymmetric pn-junction
    1600, American Institute of Physics Inc. (113):
  • [8] Bilayer graphene Hall bar with a pn-junction
    Milovanovic, S. P.
    Masir, M. Ramezani
    Peeters, F. M.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (11)
  • [9] THE MAGNETOCONCENTRATION EFFECT IN THE BASE-SUBSTRATE pn-JUNCTION OF A BIPOLAR MAGNETOTRANSISTOR
    Tikhonov, R. D.
    MEASUREMENT TECHNIQUES, 2009, 52 (12) : 1344 - 1350
  • [10] Peculiarity of depletion region in diamond pn-junction
    Koide, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (11): : 6800 - 6803