Graphene Hall bar with an asymmetric pn-junction

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[1] Milovanović, S.P.
[2] Ramezani Masir, M.
[3] Peeters, F.M.
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| 1600年 / American Institute of Physics Inc.卷 / 113期
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We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates and Hall type of plateaus are formed. These plateaus occur as a consequence of the restriction on the angle imposed by Snell's law allowing only electrons with a certain initial angles to transmit though the potential step. The size of the plateau and its position is determined by the position of the potential interface as well as the value of the applied potential. When the second region is p-type; the bend resistance dominates; which is asymmetric in field due to the presence of snake states. Changing the position of the pn-interface in the Hall bar strongly affects these states and therefore the bend resistance is also changed. Changing the applied potential; we observe that the bend resistance exhibits a peak around the charge-neutrality point (CNP); which is independent of the position of the pn-interface; while the Hall resistance shows a sign reversal when the CNP is crossed; which is in very good agreement with a recent experiment [J. R. Williams and C. M. Marcus; Phys; Rev; Lett; 107; 046602 (2011)]. © 2013 AIP Publishing LLC;
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