SAMARIUM AS A SCHOTTKY-BARRIER ON P-TYPE-SILICON

被引：2
|
作者：
NIPOTI, R
GARRIDO, J
GUERRI, S
机构：
来源：
SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 12期
关键词：
D O I：
10.1016/0038-1101(86)90132-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1267 / 1270
页数：4
相关论文
共 50 条
  • [21] ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
    EGLASH, SJ
    NEWMAN, N
    PAN, S
    MO, D
    SHENAI, K
    SPICER, WE
    PONCE, FA
    COLLINS, DM
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5159 - 5169
  • [22] AMORPHOUS-SILICON BULK BARRIER PHOTOTRANSISTOR WITH SCHOTTKY-BARRIER EMITTER
    CHANG, CY
    WU, BS
    FANG, YK
    LEE, RH
    APPLIED PHYSICS LETTERS, 1985, 47 (01) : 49 - 51
  • [23] SCHOTTKY-BARRIER MEASUREMENTS ON P-TYPE IN0.53GA0.47AS
    VETERAN, JL
    MULLIN, DP
    ELDER, DI
    THIN SOLID FILMS, 1982, 97 (02) : 187 - 190
  • [24] EFFECTS OF HYDROGEN ON ER/P-TYPE SI SCHOTTKY-BARRIER DIODES
    WANG, ZM
    ZHANG, YX
    WU, K
    YUAN, MH
    CHEN, WX
    QIN, GG
    PHYSICAL REVIEW B, 1995, 51 (12) : 7878 - 7881
  • [25] SPUTTERED SCHOTTKY-BARRIER SOLAR-CELLS ON P-TYPE GAAS
    EDWEEB, ME
    CHARLSON, EJ
    CHARLSON, EM
    APPLIED PHYSICS LETTERS, 1983, 43 (06) : 572 - 574
  • [26] METAL CONTACTS TO P-TYPE GAAS WITH LARGE SCHOTTKY-BARRIER HEIGHTS
    WALDROP, JR
    APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1518 - 1520
  • [27] Effects of hydrogen on Er/p-type Si Schottky-barrier diodes
    1600, (24):
  • [28] GOLD P-TYPE SI SCHOTTKY-BARRIER IR DETECTOR/EC
    NOMURA, Y
    HASE, N
    YAMAKA, E
    INFRARED PHYSICS, 1977, 17 (03): : 233 - 234
  • [29] SCHOTTKY-BARRIER HEIGHT MODIFICATION ON N-TYPE SILICON BY WET CHEMICAL ETCHING
    ADEGBOYEGA, GA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 111 (01): : K31 - K35
  • [30] SCHOTTKY-BARRIER DIODES
    ADAMS, AR
    JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (10): : 958 - &
12345