SURFACE STATES ON SILICON SURFACES BOMBARDED AND ANNEALED IN HIGH VACUUM

被引：7
|
作者：
NESTERENKO, BA
SNITKO, OV
机构：
来源：
SURFACE SCIENCE | 1966年 / 5卷 / 03期
关键词：
D O I：
10.1016/0039-6028(66)90035-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：380 / +
页数：1
相关论文
共 50 条
  • [41] SURFACE RECONSTRUCTION OF HYDROGEN ANNEALED (100) SILICON
    BENDER, H
    VERHAVERBEKE, S
    CAYMAX, M
    VATEL, O
    HEYNS, MM
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) : 1207 - 1209
  • [42] Surface reconstruction of hydrogen annealed (100) silicon
    1600, (75):
  • [43] Structure and composition of chemically prepared and vacuum annealed InSb(001) surfaces
    Tereshchenko, O. E.
    APPLIED SURFACE SCIENCE, 2006, 252 (21) : 7684 - 7690
  • [44] EROSION OF CORNERS AND EDGES ON AN ION-BOMBARDED SILICON SURFACE
    SMITH, R
    TAGG, MA
    CARTER, G
    NOBES, MJ
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1986, 5 (01) : 115 - 120
  • [45] Defect states at silicon surfaces
    Reddy, AJ
    Chan, JV
    Burr, TA
    Mo, R
    Wade, CP
    Chidsey, CED
    Michel, J
    Kimerling, LC
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 468 - 472
  • [46] Defect states at silicon surfaces
    Reddy, A.J.
    Chan, J.V.
    Burr, T.A.
    Mo, R.
    Wade, C.P.
    Chidsey, C.E.D.
    Michel, J.
    Kimerling, L.C.
    Physica B: Condensed Matter, 1999, 273 : 468 - 472
  • [47] SURFACE POTENTIAL OF METAL SURFACES UNDER ELECTRON BOMBARDMENT IN HIGH VACUUM
    PETITCLERC, Y
    CARETTE, JD
    VACUUM, 1968, 18 (01) : 7 - +
  • [48] Microporosity and adhesion of ion bombarded thin silicon surface films
    Ensinger, W.
    Barth, M.
    Wolf, G.K.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1988, B32 (1-4) : 104 - 110
  • [49] RECOMBINATION CENTERS ON ION-BOMBARDED AND VACUUM HEAT-TREATED GERMANIUM SURFACES
    WANG, S
    WALLIS, G
    JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) : 285 - 290
  • [50] VACUUM THERMAL ETCHING OF GERMANIUM AND SILICON SURFACES
    RUSSELL, GJ
    HANEMAN, D
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) : 398 - &
12345