DRY ETCHING OF SILICON MATERIALS IN SF6 BASED PLASMAS - ROLES OF N2O AND O-2 GAS ADDITIVES

被引：28
|
作者：
TZENG, Y
LIN, TH
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 09期
关键词：
D O I：
10.1149/1.2100875
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2304 / 2309
页数：6
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