FINE-STRUCTURES IN THE ELECTROABSORPTION SPECTRA OF GAAS QUANTUM-WELLS

被引:7
|
作者
WEN, GZ [1 ]
CHANG, YC [1 ]
机构
[1] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA
关键词
D O I
10.1103/PhysRevB.45.6101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present theoretical calculations of detailed electroabsorption spectra for GaAs quantum wells, using a k-space sampling method. The valence-band mixing, excitonic effect, and Fano resonances due to the interaction of discrete exciton states with continua are all properly taken into account. Our calculation offers a direct comparison between theory and experiment. By including the coupling between states derived from the HH1 and LH1 subbands, we can account for the interesting anticrossing behavior between the 2p excited state of the HH1-CB1 exciton and ground state of the LH1-CB1 exciton, as observed by Vina et al. The agreement between experiment and our theory is quite satisfactory.
引用
收藏
页码:6101 / 6105
页数:5
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